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  Datasheet File OCR Text:
 CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT NPN SILICON Transistor
VOLTAGE 160 Volts
APPLICATION
* Telephony and proferssional communction equipment.
CHT5551WPT
CURRENT 0.2 Ampere
FEATURE
* Small surface mounting type. (SC-70/SOT-323) * Suitable for high packing density.
(2)
SC-70/SOT-323
CONSTRUCTION
* NPN transistors in one package.
(3)
1.30.1 0.30.1
0.65 2.00.2 0.65
1.250.1
(1)
MARKING
* YW
0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45
CIRCUIT
1
3
2
Dimensions in millimeters
SC-70/SOT-323
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - -65 MIN. MAX. 180 160 6.0 200 0.3 +150 150 +150 UNIT V V V mA W C C C
2004-11
RATING CHARACTERISTIC CURVES ( CHT5551WPT )
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO ICBO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 120 V VCB = 120 V,TA=100OC VEB=4.0V IC = 1.0 mA; VCE = 5V IC = 10mA; VCE = 5V IC = 50 mA; VCE =5V - - - 80 80 30 MIN. MAX. 50 50 50 - 250 - UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 420 UNIT K/W
VCEsat
collector-emitter saturation voltage base-emitter saturation voltage collector capacitance
IC = 10 mA; IB = 1.0 m A IC = 50 mA; IB = 5.0 m A IC =10mA; IB =1.0mA -50 IC = mA; IB = 5.0 m A IE = ie = 0; VCB = 1 0 V; f = 1 MHz VCE=10V,IC=1.0mA,f=1.0KHz
- - - - - 50 100
0.15 0.2 1.0 1.0 6.0 200 300 8.0
V V V V pF
VBEsat Cob hfe fT F
transition frequency noise gure
IC = 10 mA; VCE = 1 0 V; f = 100 MHz
MHz dB
IC = 200 mA; VCE = 5 V; RS = 1 0 ; - f =10Hz to 15.7KHz


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